Etude et simulation de semi-conducteurs Sc-AIN pour les dispositifs optoélectroniques

Abstract

Group III nitrides are widely used in optoelectronic applications. However, the external efficiency of III-nitride-based light emitting diodes in the deep-UV region is extremely low compared to those emitting in the visible region. The addition of a certain percentage of scandium in the hexagonal structure of aluminum nitride makes it possible to solve this type of problem. Theoretical calculations predict that the ScN alloy can produce Scx Al 1-x N semiconductor films of wurtzite structure with direct bandgaps, and good optical properties in the UV region. Great interest in the calculation of the optical properties of the Sc-AlN composite material. For this, we find several theories used to model these properties, we have presented the finite element method, the Rayleigh-Rice theory, and the theory of effective media (EMA). This work consists of simulating Sc-AlN parameters in order to improve the properties of a light emitting diode. For this, we have implemented the GPVDM software. We have made considerable efforts to adapt our requirements to the software and achieve the best possible result for the material used. The results obtained were satisfactory and in agreement with the literature.