Etude d'une jonction PN à bande interdite graduée en cascade(simulation sur scaps)

Abstract

In the global context of the diversification of the use of natural resources, recourse to renewable energies and in particular solar photovoltaic is increasing. As such, the development of a new generation of SnS-based photovoltaic cells seems promising. Indeed, the theoretical yield of these cells extends to 21%. In this modeling and simulation work, we use the SCAPS 1D software, to study the performance of SnS-based solar cells. We first evaluate the shortcircuit current Isc, the open-circuit voltage Vco, the form factor FF and the electrical efficiency η for a single pn junction. Subsequently, the gap energy of each n and p layer is varied to study the influence of the gap energy on the efficiency of the junction (A slight improvement in the efficiency has been observed. An optimal conversion efficiency of 7.64% in layer n). Then, the p-layer was fragmented to improve the yield of the junction much more. The simulation results showed that cell parameters such as the layer's gap energy play an important role in cell performance. After fragmentation, the yield increases to 21% (almost 3 times more).