Etude de matériaux réfractaires monolithiques

Abstract

Abstract Of particular interest is zinc oxide an n type semiconductor that exhibits excellent properties which makes it useful in many interesting and relevant fields such as optoelectronics. Consequently, the present work consists of the synthesis and characterization of pure and doped ZnO thin films in order to improve their structural, optical and electrical properties. The films were deposited on ITO substrates by wet chemical methods. The characterizations of Sn and Al- doped ZnO thin films show that these dopants are able to modify the optical properties of ZnO films by increasing the band gap and enhancing the transmittance and photoluminescence intensity, which makes this film suitable, for instance, to be used in new technology. The characterization of Sn and Al doped ZnO thin films showed that doping affects the structural, morphological and electrical properties of ZnO. In particular we demonstrated the possibility of depositing Sn and Al doped ZnO thin films at low temperatures likely to be used in applications in photovoltaic cells, in layers thin as well as in several other areas, depending on the molar concentration, the rate of doping and the type of substrate used.